Transistor MOSFET N-CH 600V 72A 3-Pin TO-247 Tube

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STGWA40H65FB

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STMicroelectronics

TRENCH GATE FIELD-STOP 650 V, 40 A HIGH SPEED HB SERIES IGBT

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DocumentsProduct Change Notice EN Datasheet +11

Discrete Semiconductor Products

STGWA40H65FB

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STMicroelectronics

TRENCH GATE FIELD-STOP 650 V, 40 A HIGH SPEED HB SERIES IGBT

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DocumentsProduct Change Notice EN Datasheet +11

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STGWA40H65FB

Current - Collector (Ic) (Max) [Max]	80 A
Gate Charge	210 nC
IGBT Type	Trench Field Stop
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power - Max [Max]	283 W
Supplier Device Package	TO-247 Long Leads
Switching Energy	498 µJ, 363 µJ
Td (on/off) @ 25°C	142 ns
Td (on/off) @ 25°C	40 ns
Test Condition	15 V, 5 Ohm, 400 V, 40 A
Vce(on) (Max) @ Vge, Ic	2 V
Voltage - Collector Emitter Breakdown (Max)	650 V

STGWA40H120DF2 Series

Trench gate field-stop 650 V, 40 A, soft-switching IH series IGBT in a TO-247 long leads package

Part	Switching Energy	Reverse Recovery Time (trr)	Gate Charge	Operating Temperature [Min]	Operating Temperature [Max]	Voltage - Collector Emitter Breakdown (Max)	Supplier Device Package	Td (on/off) @ 25°C	Td (on/off) @ 25°C	Current - Collector (Ic) (Max) [Max]	IGBT Type	Package / Case	Test Condition	Vce(on) (Max) @ Vge, Ic	Mounting Type	Power - Max [Max]	Td (on/off) @ 25°C	Current - Collector Pulsed (Icm)	Voltage - Collector Emitter Breakdown (Max) [Max]
STMicroelectronics STGWA40H65DFB	363 µJ 498 µJ	62 ns	210 nC	-55 °C	175 ░C	650 V	TO-247 Long Leads	142 ns	40 ns	80 A	Trench Field Stop	TO-247-3	5 Ohm 15 V 40 A 400 V	2 V	Through Hole	283 W
STMicroelectronics STGWA40H65FB	363 µJ 498 µJ		210 nC	-55 °C	175 ░C	650 V	TO-247 Long Leads	142 ns	40 ns	80 A	Trench Field Stop	TO-247-3	5 Ohm 15 V 40 A 400 V	2 V	Through Hole	283 W
STMicroelectronics STGWA40IH65DF	190 µJ		114 nC	-55 °C	175 ░C	650 V	TO-247 Long Leads			80 A	Trench Field Stop	TO-247-3	15 V 22 Ohm 40 A 400 V	2 V	Through Hole	238 W	-/210ns	120 A
STMicroelectronics STGWA40S120DF3	1.43 mJ 3.83 mJ	355 ns	129 nC	-55 °C	175 ░C		TO-247-3		35 ns 148 ns	80 A	Trench Field Stop	TO-247-3	15 V 15 Ohm 40 A 600 V	2.15 V	Through Hole	468 W			1200 V
STMicroelectronics STGWA40H120DF2	1 mJ 1.32 mJ	488 ns	158 nC	-55 °C	175 ░C		TO-247-3		18 ns 152 ns	80 A	Trench Field Stop	TO-247-3	10 Ohm 15 V 40 A 600 V	2.6 V	Through Hole	468 W			1200 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 2.83
		30	$ 2.24
		120	$ 1.92
		510	$ 1.88
Newark	Each	1	$ 6.05
		10	$ 5.20
		25	$ 3.70
		50	$ 3.55
		100	$ 3.39
		250	$ 3.07

Description

General part information

STGWA40H120DF2 Series

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the H series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Furthermore, a slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.

STGWA40H65FB

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STGWA40H65FB

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Technical Specifications

STGWA40H120DF2 Series

Pricing

Description

STGWA40H120DF2 Series

Documents

Product Change Notice EN

Datasheet

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STGWA40H120DF2 Series