Specification	NLAS5223CMUTAG

-3db Bandwidth	24 MHz
Channel Capacitance (CS(off), CD(off)) [custom]	60 pF
Channel Capacitance (CS(off), CD(off)) [custom]	60 pF
Channel-to-Channel Matching (ΔRon) [Max]	50 mOhm
Charge Injection	38 pC
Crosstalk	-70 dB
Current - Leakage (IS(off)) (Max)	5 nA
Mounting Type	Surface Mount
Multiplexer/Demultiplexer Circuit	2:1
Number of Circuits	2
On-State Resistance (Max) [Max]	350 mOhm
Operating Temperature [Max]	85 °C
Operating Temperature [Min]	-40 °C
Package / Case	10-UFQFN
Supplier Device Package	10-UQFN (1.4x1.8)
Switch Circuit	SPDT
Switch Time (Ton, Toff) (Max) [custom]	30 ns
Switch Time (Ton, Toff) (Max) [custom]	50 ns
Voltage - Supply, Single (V+) [Max]	4.5 V
Voltage - Supply, Single (V+) [Min]	1.65 V

NLAS5223C Series

Ultra-Low 0.35 Ω Dual SPDT Analog Switch

Part	On-State Resistance (Max) [Max]	Channel-to-Channel Matching (ΔRon) [Max]	Channel Capacitance (CS(off), CD(off)) [custom]	Channel Capacitance (CS(off), CD(off)) [custom]	Charge Injection	Switch Time (Ton, Toff) (Max) [custom]	Switch Time (Ton, Toff) (Max) [custom]	Multiplexer/Demultiplexer Circuit	Current - Leakage (IS(off)) (Max)	Supplier Device Package	Package / Case	Switch Circuit	Operating Temperature [Max]	Operating Temperature [Min]	Crosstalk	-3db Bandwidth	Mounting Type	Number of Circuits	Voltage - Supply, Single (V+) [Max]	Voltage - Supply, Single (V+) [Min]	Current - Leakage (IS(off)) (Max) [Max]
ON Semiconductor NLAS5223CMUTAG	350 mOhm	50 mOhm	60 pF	60 pF	38 pC	30 ns	50 ns	2:1	5 nA	10-UQFN (1.4x1.8)	10-UFQFN	SPDT	85 °C	-40 °C	-70 dB	24 MHz	Surface Mount	2	4.5 V	1.65 V
ON Semiconductor NLAS5223BMNR2G	350 mOhm	50 mOhm	60 pF	60 pF	38 pC	50 ns	50 ns	2:1		1.4x1.8 10-WQFN	10-WFQFN	SPDT	85 °C	-40 °C	-70 dB	19 MHz	Surface Mount	2	4.5 V	1.65 V	500 nA

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

NLAS5223C Series

The NLAS5223B is an advanced CMOS analog switch fabricated in Sub micron silicon gate CMOS technology. The device is a dual Independent Single Pole Double Throw (SPDT) switch featuring Ultra Low RON of 0.5 Ohm, at VCC = 3.0 V. The part also features guaranteed Break Before Make (BBM) switching, assuring the switches never short the driver.