Discrete Semiconductor Products

IRFBC30LPBF

Obsolete

Vishay General Semiconductor - Diodes Division

MOSFET N-CH 600V 3.6A TO262-3

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Discrete Semiconductor Products

IRFBC30LPBF

Obsolete

Vishay General Semiconductor - Diodes Division

MOSFET N-CH 600V 3.6A TO262-3

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IRFBC30LPBF

Current - Continuous Drain (Id) @ 25°C	3.6 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	31 nC
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max)	3.1 W, 74 W
Rds On (Max) @ Id, Vgs	2.2 Ohm
Supplier Device Package	TO-262-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

IRFBC30 Series

Part	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	FET Type	Technology	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Mounting Type	Package / Case	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)
Vishay General Semiconductor - Diodes Division IRFBC30A	10 V	23 nC	510 pF	30 V	3.6 A	N-Channel	MOSFET (Metal Oxide)	74 W	4.5 V	600 V	-55 °C	150 °C	TO-220AB	Through Hole	TO-220-3	2.2 Ohm
Vishay General Semiconductor - Diodes Division IRFBC30LPBF	10 V	31 nC		20 V	3.6 A	N-Channel	MOSFET (Metal Oxide)		4 V	600 V	-55 °C	150 °C	TO-262-3	Through Hole	I2PAK TO-262-3 Long Leads TO-262AA	2.2 Ohm	3.1 W 74 W
Vishay General Semiconductor - Diodes Division IRFBC30AS	10 V	23 nC	510 pF	30 V	3.6 A	N-Channel	MOSFET (Metal Oxide)	74 W	4.5 V	600 V	-55 °C	150 °C	TO-263 (D2PAK)	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	2.2 Ohm
Vishay General Semiconductor - Diodes Division IRFBC30PBF	10 V	31 nC		20 V	3.6 A	N-Channel	MOSFET (Metal Oxide)	74 W	4 V	600 V	-55 °C	150 °C	TO-220AB	Through Hole	TO-220-3	2.2 Ohm
Vishay General Semiconductor - Diodes Division IRFBC30APBF-BE3	10 V	23 nC	510 pF	30 V	3.6 A	N-Channel	MOSFET (Metal Oxide)	74 W	4.5 V	600 V	-55 °C	150 °C	TO-220AB	Through Hole	TO-220-3	2.2 Ohm
Vishay General Semiconductor - Diodes Division IRFBC30APBF	10 V	23 nC	510 pF	30 V	3.6 A	N-Channel	MOSFET (Metal Oxide)	74 W	4.5 V	600 V	-55 °C	150 °C	TO-220AB	Through Hole	TO-220-3	2.2 Ohm
Vishay General Semiconductor - Diodes Division IRFBC30S	10 V	31 nC		20 V	3.6 A	N-Channel	MOSFET (Metal Oxide)		4 V	600 V	-55 °C	150 °C	TO-263 (D2PAK)	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	2.2 Ohm	3.1 W 74 W
Vishay General Semiconductor - Diodes Division IRFBC30SPBF	10 V	31 nC		20 V	3.6 A	N-Channel	MOSFET (Metal Oxide)		4 V	600 V	-55 °C	150 °C	TO-263 (D2PAK)	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	2.2 Ohm	3.1 W 74 W
Vishay General Semiconductor - Diodes Division IRFBC30ASTRL	10 V	23 nC	510 pF	30 V	3.6 A	N-Channel	MOSFET (Metal Oxide)	74 W	4.5 V	600 V	-55 °C	150 °C	TO-263 (D2PAK)	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	2.2 Ohm
Vishay General Semiconductor - Diodes Division IRFBC30STRLPBF	10 V	31 nC		20 V	3.6 A	N-Channel	MOSFET (Metal Oxide)		4 V	600 V	-55 °C	150 °C	TO-263 (D2PAK)	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	2.2 Ohm	3.1 W 74 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

IRFBC30 Series

N-Channel 600 V 3.6A (Tc) 3.1W (Ta), 74W (Tc) Through Hole TO-262-3

Documents

Technical documentation and resources

No documents available