IRFBC30 Series

Manufacturer: Vishay General Semiconductor - Diodes Division

Catalog

MOSFET N-CH 600V 3.6A TO220AB

Part	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	FET Type	Technology	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Mounting Type	Package / Case	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)
Vishay General Semiconductor - Diodes Division IRFBC30A	10 V	23 nC	510 pF	30 V	3.6 A	N-Channel	MOSFET (Metal Oxide)	74 W	4.5 V	600 V	-55 °C	150 °C	TO-220AB	Through Hole	TO-220-3	2.2 Ohm
Vishay General Semiconductor - Diodes Division IRFBC30LPBF	10 V	31 nC		20 V	3.6 A	N-Channel	MOSFET (Metal Oxide)		4 V	600 V	-55 °C	150 °C	TO-262-3	Through Hole	I2PAK TO-262-3 Long Leads TO-262AA	2.2 Ohm	3.1 W 74 W
Vishay General Semiconductor - Diodes Division IRFBC30AS	10 V	23 nC	510 pF	30 V	3.6 A	N-Channel	MOSFET (Metal Oxide)	74 W	4.5 V	600 V	-55 °C	150 °C	TO-263 (D2PAK)	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	2.2 Ohm
Vishay General Semiconductor - Diodes Division IRFBC30PBF	10 V	31 nC		20 V	3.6 A	N-Channel	MOSFET (Metal Oxide)	74 W	4 V	600 V	-55 °C	150 °C	TO-220AB	Through Hole	TO-220-3	2.2 Ohm
Vishay General Semiconductor - Diodes Division IRFBC30APBF-BE3	10 V	23 nC	510 pF	30 V	3.6 A	N-Channel	MOSFET (Metal Oxide)	74 W	4.5 V	600 V	-55 °C	150 °C	TO-220AB	Through Hole	TO-220-3	2.2 Ohm
Vishay General Semiconductor - Diodes Division IRFBC30APBF	10 V	23 nC	510 pF	30 V	3.6 A	N-Channel	MOSFET (Metal Oxide)	74 W	4.5 V	600 V	-55 °C	150 °C	TO-220AB	Through Hole	TO-220-3	2.2 Ohm
Vishay General Semiconductor - Diodes Division IRFBC30S	10 V	31 nC		20 V	3.6 A	N-Channel	MOSFET (Metal Oxide)		4 V	600 V	-55 °C	150 °C	TO-263 (D2PAK)	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	2.2 Ohm	3.1 W 74 W
Vishay General Semiconductor - Diodes Division IRFBC30SPBF	10 V	31 nC		20 V	3.6 A	N-Channel	MOSFET (Metal Oxide)		4 V	600 V	-55 °C	150 °C	TO-263 (D2PAK)	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	2.2 Ohm	3.1 W 74 W
Vishay General Semiconductor - Diodes Division IRFBC30ASTRL	10 V	23 nC	510 pF	30 V	3.6 A	N-Channel	MOSFET (Metal Oxide)	74 W	4.5 V	600 V	-55 °C	150 °C	TO-263 (D2PAK)	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	2.2 Ohm
Vishay General Semiconductor - Diodes Division IRFBC30STRLPBF	10 V	31 nC		20 V	3.6 A	N-Channel	MOSFET (Metal Oxide)		4 V	600 V	-55 °C	150 °C	TO-263 (D2PAK)	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	2.2 Ohm	3.1 W 74 W