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Technical Specifications
Parameters and characteristics for this part
| Specification | RQ7E110AJTCR |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 11 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 2410 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Power Dissipation (Max) | 1.5 W |
| Rds On (Max) @ Id, Vgs | 9 mOhm |
| Supplier Device Package | TSMT8 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 12 V |
| Vgs(th) (Max) @ Id | 1.5 V |
Pricing
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Description
General part information
RQ7E110AJ Series
RQ7E110AJ is low on-resistance and small surface mount package MOSFET for switching application.
Documents
Technical documentation and resources