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Nch 30V 11A Middle Power MOSFET
Description
AI
RQ7E110AJ is low on-resistance and small surface mount package MOSFET for switching application.
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Nch 30V 11A Middle Power MOSFET
Nch 30V 11A Middle Power MOSFET
| Part | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs | FET Type | Operating Temperature [Max] | Operating Temperature [Min] | Supplier Device Package | Technology | Drive Voltage (Max Rds On, Min Rds On) | Input Capacitance (Ciss) (Max) @ Vds | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Rohm Semiconductor | 1.5 W | 9 mOhm | 1.5 V | Surface Mount | 11 A | 12 V | 22 nC | N-Channel | 150 °C | -55 °C | TSMT8 | MOSFET (Metal Oxide) | 4.5 V | 2410 pF | 30 V |