Discrete Semiconductor Products

SQ4850EY-T1_BE3

Obsolete

MOSFET N-CH 60V 12A 8SOIC

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 60V 12A 8SOIC

Technical Specifications

Parameters and characteristics for this part

Specification	SQ4850EY-T1_BE3

Current - Continuous Drain (Id) @ 25°C	12 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	30 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	1250 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max) [Max]	6.8 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	22 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max) [Max]	Mounting Type	Vgs (Max)	Supplier Device Package	Grade	Qualification	Package / Case	Package / Case [y]	Package / Case [x]	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Technology	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	FET Type
Vishay General Semiconductor - Diodes Division SQ4850EY-T1_BE3	-55 °C	175 ░C	6.8 W	Surface Mount	20 V	8-SOIC	Automotive	AEC-Q101	8-SOIC	3.9 mm	0.154 in	2.5 V	4.5 V 10 V	MOSFET (Metal Oxide)	60 V	30 nC	1250 pF	12 A	22 mOhm	N-Channel

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General part information

N-Channel 60 V 12A (Tc) 6.8W (Tc) Surface Mount 8-SOIC

Technical documentation and resources