SQ4850 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 60V 12A 8SOIC
| Part | Operating Temperature [Min] | Operating Temperature [Max] | Power Dissipation (Max) [Max] | Mounting Type | Vgs (Max) | Supplier Device Package | Grade | Qualification | Package / Case | Package / Case [y] | Package / Case [x] | Vgs(th) (Max) @ Id | Drive Voltage (Max Rds On, Min Rds On) | Technology | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | -55 °C | 175 ░C | 6.8 W | Surface Mount | 20 V | 8-SOIC | Automotive | AEC-Q101 | 8-SOIC | 3.9 mm | 0.154 in | 2.5 V | 4.5 V 10 V | MOSFET (Metal Oxide) | 60 V | 30 nC | 1250 pF | 12 A | 22 mOhm | N-Channel |