1N5417E3
ActiveRECTIFIER DIODE SWITCHING 2-PIN 200V, 3A, 150NS B-BODY
Deep-Dive with AI
Search across all available documentation for this part.
1N5417E3
ActiveRECTIFIER DIODE SWITCHING 2-PIN 200V, 3A, 150NS B-BODY
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | 1N5417E3 |
|---|---|
| Current - Average Rectified (Io) | 3 A |
| Mounting Type | Through Hole |
| Operating Temperature - Junction [Max] | 175 ░C |
| Operating Temperature - Junction [Min] | -65 C |
| Package / Case | Axial, B |
| Reverse Recovery Time (trr) | 150 ns |
| Speed | 200 mA, 500 ns |
| Supplier Device Package | B, Axial |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) [Max] | 200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 188 | $ 4.36 | |
| Microchip Direct | N/A | 1 | $ 4.69 | |
| Newark | Each | 100 | $ 4.36 | |
| 500 | $ 4.19 | |||
Description
General part information
1N5417-E3-Rectifier Series
This "fast recovery" rectifier diode series is military qualified and is ideal for high-reliability applications where a failure cannot be tolerated. These industry-recognized 3.0 amp rated rectifiers for working peak reverse voltages from 50 to 600 volts are hermetically sealed with voidless-glass construction using an internal "Category 1" metallurgical bond. These devices are also available in surface mount MELF package configurations. Microchip also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time speed requirements including fast and ultrafast device types in both through-hole and surface mount packages.
Documents
Technical documentation and resources