Discrete Semiconductor Products

TSM4NC50CP ROG

Obsolete

MOSFET N-CHANNEL 500V 4A TO252

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CHANNEL 500V 4A TO252

Technical Specifications

Parameters and characteristics for this part

Specification	TSM4NC50CP ROG

Current - Continuous Drain (Id) @ 25°C	4 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	12 nC
Input Capacitance (Ciss) (Max) @ Vds	453 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-252-3, SC-63, DPAK (2 Leads + Tab)
Power Dissipation (Max)	83 W
Rds On (Max) @ Id, Vgs	2.7 Ohm
Supplier Device Package	TO-252 (DPAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Part	Package / Case	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	FET Type	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]
Taiwan Semiconductor Corporation TSM4NC50CP ROG	DPAK (2 Leads + Tab) SC-63 TO-252-3	2.7 Ohm	453 pF	MOSFET (Metal Oxide)	12 nC	3 V	4 A	TO-252 (DPAK)	83 W	10 V	20 V	Surface Mount	150 °C	-55 °C	N-Channel	500 V
Taiwan Semiconductor Corporation TSM4ND65CI	TO-220-3 Full Pack Isolated Tab	2.6 Ohm	596 pF	MOSFET (Metal Oxide)	16.8 nC	3.8 V	4 A	ITO-220		10 V	30 V	Through Hole	150 °C	-55 °C	N-Channel	650 V	41.6 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.96

General part information

N-Channel 500 V 4A (Tc) 83W (Tc) Surface Mount TO-252 (DPAK)

Technical documentation and resources

No documents available