TSM4 Series
Manufacturer: Taiwan Semiconductor Corporation
MOSFET N-CHANNEL 500V 4A TO252
| Part | Package / Case | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds | Technology | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | Power Dissipation (Max) | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Mounting Type | Operating Temperature [Max] | Operating Temperature [Min] | FET Type | Drain to Source Voltage (Vdss) | Power Dissipation (Max) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Taiwan Semiconductor Corporation | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 2.7 Ohm | 453 pF | MOSFET (Metal Oxide) | 12 nC | 3 V | 4 A | TO-252 (DPAK) | 83 W | 10 V | 20 V | Surface Mount | 150 °C | -55 °C | N-Channel | 500 V | |
Taiwan Semiconductor Corporation | TO-220-3 Full Pack Isolated Tab | 2.6 Ohm | 596 pF | MOSFET (Metal Oxide) | 16.8 nC | 3.8 V | 4 A | ITO-220 | 10 V | 30 V | Through Hole | 150 °C | -55 °C | N-Channel | 650 V | 41.6 W |