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Microchip Technology-2N6295 Darlington BJT Trans Darlington NPN 80V 4A 50000mW 3-Pin(2+Tab) TO-66
Discrete Semiconductor Products

2N3584

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Microchip Technology

TRANS GP BJT NPN 250V 2A 2500MW 3-PIN(2+TAB) TO-66 TRAY

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Microchip Technology-2N6295 Darlington BJT Trans Darlington NPN 80V 4A 50000mW 3-Pin(2+Tab) TO-66
Discrete Semiconductor Products

2N3584

Active
Microchip Technology

TRANS GP BJT NPN 250V 2A 2500MW 3-PIN(2+TAB) TO-66 TRAY

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

Specification2N3584
Current - Collector (Ic) (Max) [Max]2 A
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]40
Mounting TypeThrough Hole
Package / CaseTO-66-2, TO-213AA
Power - Max [Max]2.5 W
Supplier Device PackageTO-66 (TO-213AA)
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic750 mV
Voltage - Collector Emitter Breakdown (Max)250 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 100$ 34.94
Microchip DirectN/A 1$ 37.63
NewarkEach 100$ 34.94
500$ 33.60

Description

General part information

2N3584-Transistor Series

This specification covers the performance requirements for NPN, silicon, power, 2N3584 and 2N3585 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for this device type as specified in MIL-PRF-19500/384. The device package for the encapsulated device type are as follows: (TO-66).

Documents

Technical documentation and resources