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Technical Specifications
Parameters and characteristics for this part
| Specification | 2N3998 |
|---|---|
| Current - Collector (Ic) (Max) | 5 A |
| Current - Collector Cutoff (Max) [Max] | 10 µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 40 |
| Mounting Type | Stud Mount |
| Package / Case | TO-210AA, Stud, TO-59-4 |
| Power - Max [Max] | 2 W |
| Supplier Device Package | TO-59 |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 2 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 80 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 100 | $ 140.21 | |
| Microchip Direct | N/A | 1 | $ 151.00 | |
| Newark | Each | 100 | $ 140.22 | |
| 500 | $ 134.83 | |||
Description
General part information
2N3998-Transistor Series
This specification covers the performance requirements for NPN silicon, power 2N3996 through 2N3999 transistors for use in high-speed power switching applications. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device as specified in MIL-PRF-19500/374. Two levels of product assurance (JANHC and JANKC) are provided for the unencapsulated die. The device package outlines for the encapsulated device types are as follows: 4 terminal stud (TO-111) package for types 2N3996 and 2N3997 and 3 terminal stud (TO-111) package for types 2N3998 and 2N3999.
Documents
Technical documentation and resources