Discrete Semiconductor Products

SCT040W65G3-4

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STMicroelectronics

SILICON CARBIDE POWER MOSFET 650 V, 45 MOHM TYP., 30 A IN AN HIP247-4 PACKAGE

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DocumentsSCT040W65G3-4 | Datasheet +24

Discrete Semiconductor Products

SCT040W65G3-4

Active

STMicroelectronics

SILICON CARBIDE POWER MOSFET 650 V, 45 MOHM TYP., 30 A IN AN HIP247-4 PACKAGE

Deep-Dive with AI

DocumentsSCT040W65G3-4 | Datasheet +24

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	SCT040W65G3-4

Current - Continuous Drain (Id) @ 25°C	30 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	18 V, 15 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	37.5 nC
Input Capacitance (Ciss) (Max) @ Vds	860 pF
Mounting Type	Through Hole
Operating Temperature [Max]	200 °C
Operating Temperature [Min]	-55 ░C
Package / Case	TO-247-4
Power Dissipation (Max)	240 W
Rds On (Max) @ Id, Vgs	63 mOhm
Supplier Device Package	TO-247-4
Vgs (Max) [Max]	18 V, -5 V
Vgs(th) (Max) @ Id	4.2 V

SCT040W65G3-4 Series

Silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package

Part	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Operating Temperature [Max]	Operating Temperature [Min]	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max) [Max]	Rds On (Max) @ Id, Vgs	Package / Case	Supplier Device Package	FET Type	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id
STMicroelectronics SCT040W65G3-4	650 V	15 V 18 V	240 W	200 °C	-55 ░C	37.5 nC	860 pF	-5 V 18 V	63 mOhm	TO-247-4	TO-247-4	N-Channel	Through Hole	30 A	4.2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	77	$ 12.34
Newark	Each	1	$ 10.42
		10	$ 10.17
		25	$ 9.92
		50	$ 9.67

Description

General part information

SCT040W65G3-4 Series

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.