Specification	TLC2201IP

Amplifier Type	General Purpose
Current - Input Bias	1 pA
Current - Output / Channel	50 mA
Current - Supply	1.1 mA
Mounting Type	Through Hole
Number of Circuits	1
Operating Temperature [Max]	85 °C
Operating Temperature [Min]	-40 °C
Output Type	Rail-to-Rail
Package / Case	0.3 in
Package / Case	8-DIP
Package / Case	7.62 mm
Slew Rate	2.7 V/µs
Supplier Device Package	8-PDIP
Voltage - Input Offset	100 çV
Voltage - Supply Span (Max) [Max]	16 V
Voltage - Supply Span (Min) [Min]	4.6 V

TLC2201AM Series

Low Noise Precision Advanced LinCMOS™ Single Operational Amplifier

Part	Operating Temperature [Max]	Operating Temperature [Min]	Voltage - Supply Span (Max) [Max]	Amplifier Type	Supplier Device Package	Number of Circuits	Package / Case	Package / Case [y]	Package / Case [x]	Output Type	Slew Rate	Voltage - Input Offset	Current - Supply	Voltage - Supply Span (Min) [Min]	Current - Output / Channel	Mounting Type	Current - Input Bias	Package / Case	Package / Case
Texas Instruments TLC2201CD	70 °C	0 °C	16 V	General Purpose	8-SOIC	1	8-SOIC	3.9 mm	0.154 in	Rail-to-Rail	2.7 V/µs	100 çV	1.1 mA	4.6 V	50 mA	Surface Mount	1 pA
Texas Instruments TLC2201ACDR	70 °C	0 °C	16 V	General Purpose	8-SOIC	1	8-SOIC	3.9 mm	0.154 in	Rail-to-Rail	2.7 V/µs	80 µV	1.1 mA	4.6 V	50 mA	Surface Mount	1 pA
Texas Instruments TLC2201IP	85 °C	-40 °C	16 V	General Purpose	8-PDIP	1	8-DIP			Rail-to-Rail	2.7 V/µs	100 çV	1.1 mA	4.6 V	50 mA	Through Hole	1 pA	0.3 in	7.62 mm
Texas Instruments TLC2201IDR	85 °C	-40 °C	16 V	General Purpose	8-SOIC	1	8-SOIC	3.9 mm	0.154 in	Rail-to-Rail	2.7 V/µs	100 çV	1.1 mA	4.6 V	50 mA	Surface Mount	1 pA
Texas Instruments TLC2201ACDRG4	70 °C	0 °C	16 V	General Purpose	8-SOIC	1	8-SOIC	3.9 mm	0.154 in	Rail-to-Rail	2.7 V/µs	80 µV	1.1 mA	4.6 V	50 mA	Surface Mount	1 pA
Texas Instruments TLC2201CP	70 °C	0 °C	16 V	General Purpose	8-PDIP	1	8-DIP			Rail-to-Rail	2.7 V/µs	100 çV	1.1 mA	4.6 V	50 mA	Through Hole	1 pA	0.3 in	7.62 mm
Texas Instruments TLC2201AIDR	85 °C	-40 °C	16 V	General Purpose	8-SOIC	1	8-SOIC	3.9 mm	0.154 in	Rail-to-Rail	2.7 V/µs	80 µV	1.1 mA	4.6 V	50 mA	Surface Mount	1 pA
Texas Instruments TLC2201AMD	125 °C	-55 °C	16 V	General Purpose	8-SOIC	1	8-SOIC	3.9 mm	0.154 in	Rail-to-Rail	2.7 V/µs	80 µV	1.1 mA	4.6 V	50 mA	Surface Mount	1 pA
Texas Instruments TLC2201CDG4	70 °C	0 °C	16 V	General Purpose	8-SOIC	1	8-SOIC	3.9 mm	0.154 in	Rail-to-Rail	2.7 V/µs	100 çV	1.1 mA	4.6 V	50 mA	Surface Mount	1 pA
Texas Instruments TLC2201CDR	70 °C	0 °C	16 V	General Purpose	8-SOIC	1	8-SOIC	3.9 mm	0.154 in	Rail-to-Rail	2.7 V/µs	100 çV	1.1 mA	4.6 V	50 mA	Surface Mount	1 pA

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 6.37
		10	$ 5.72
		50	$ 5.41
		100	$ 4.69
		250	$ 4.45
		500	$ 3.99
		1000	$ 3.36
		2500	$ 3.20
Texas Instruments	TUBE	1	$ 4.84
		100	$ 3.95
		250	$ 3.10
		1000	$ 2.63

Description

General part information

TLC2201AM Series

The TLC220x, TLC220xA, TLC220xB, and TLC220xY are precision, low-noise operational amplifiers using Texas Instruments Advanced LinCMOS™ process. These devices combine the noise performance of the lowest-noise JFET amplifiers with the dc precision available previously only in bipolar amplifiers. The Advanced LinCMOS™ process uses silicon-gate technology to obtain input offset voltage stability with temperature and time that far exceeds that obtainable using metal-gate technology. In addition, this technology makes possible input impedance levels that meet or exceed levels offered by top-gate JFET and expensive dielectric-isolated devices.

The combination of excellent DC and noise performance with a common-mode input voltage range that includes the negative rail makes these devices an ideal choice for high-impedance, low-level signal-conditioning applications in either single-supply or split-supply configurations.

The device inputs and outputs are designed to withstand –100-mA surge currents without sustaining latch-up. In addition, internal ESD-protection circuits prevent functional failures at voltages up to 2000 V as tested under MIL-PRF-38535, Method 3015.2; however, care should be exercised in handling these devices as exposure to ESD may result in degradation of the parametric performance.

Documents

Technical documentation and resources

Advanced LinCMOS (TM) Low-Noise Precision Operational Amplifiers datasheet (Rev. B)

Data sheet