Specification	FDMD8540L

Configuration	2 N-Channel (Half Bridge)
Current - Continuous Drain (Id) @ 25°C	33 A, 156 A
Drain to Source Voltage (Vdss)	40 V
Gate Charge (Qg) (Max) @ Vgs [Max]	113 nC
Input Capacitance (Ciss) (Max) @ Vds	7940 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerWDFN
Power - Max [Max]	2.3 W
Rds On (Max) @ Id, Vgs	1.5 mOhm
Supplier Device Package	8-Power 5x6
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	3 V

FDMD8540L Series

Dual N-Channel PowerTrench® MOSFET 40V, 156A, 1.5mΩ

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Vgs(th) (Max) @ Id	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Configuration	Power - Max [Max]	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Package / Case
ON Semiconductor FDMD8540L	113 nC	-55 °C	150 °C	MOSFET (Metal Oxide)	3 V	8-Power 5x6	7940 pF	1.5 mOhm	2 N-Channel (Half Bridge)	2.3 W	40 V	33 A 156 A	Surface Mount	8-PowerWDFN

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FDMD8540L Series

This device includes two 40V N-Channel MOSFETs in a dual Power (5 mm X 6 mm) package. HS source and LS drain internally connected for half/full bridge, low source inductance package, low rDS(on)/QgFOM silicon.