FDMD8540L Series

Dual N-Channel PowerTrench® MOSFET 40V, 156A, 1.5mΩ

Catalog

Dual N-Channel PowerTrench® MOSFET 40V, 156A, 1.5mΩ

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Vgs(th) (Max) @ Id	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Configuration	Power - Max [Max]	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Package / Case
ON Semiconductor FDMD8540L	113 nC	-55 °C	150 °C	MOSFET (Metal Oxide)	3 V	8-Power 5x6	7940 pF	1.5 mOhm	2 N-Channel (Half Bridge)	2.3 W	40 V	33 A 156 A	Surface Mount	8-PowerWDFN

Catalog

Dual N-Channel PowerTrench® MOSFET 40V, 156A, 1.5mΩ

Key Features

• Q1: N-ChannelMax rDS(on)= 1.5 mΩ at VGS= 10 V, ID= 33 AMax rDS(on)= 2.2 mΩ at VGS= 4.5 V, ID= 26 A

• Q2: N-ChannelMax rDS(on)= 1.5 mΩ at VGS= 10 V, ID= 33 AMax rDS(on)= 2.2 mΩ at VGS= 4.5 V, ID= 26 A

• Ideal for Flexible Layout in Primary Side of Bridge Topology

• 100% UIL Tested

• Kelvin High Side MOSFET Drive Pin-out Capability

• RoHS Compliant

Description

This device includes two 40V N-Channel MOSFETs in a dual Power (5 mm X 6 mm) package. HS source and LS drain internally connected for half/full bridge, low source inductance package, low rDS(on)/QgFOM silicon.