STB7NK80Z-1
ActiveN-CHANNEL 800 V, 1.5 OHM TYP., 5.2 A SUPERMESH POWER MOSFET IN AN I2PAK PACKAGE
STB7NK80Z-1
ActiveN-CHANNEL 800 V, 1.5 OHM TYP., 5.2 A SUPERMESH POWER MOSFET IN AN I2PAK PACKAGE
Technical Specifications
Parameters and characteristics for this part
| Specification | STB7NK80Z-1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 5.2 A |
| Drain to Source Voltage (Vdss) | 800 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 56 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 1138 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-262AA, TO-262-3 Long Leads, I2PAK |
| Power Dissipation (Max) | 125 W |
| Rds On (Max) @ Id, Vgs | 1.8 Ohm |
| Supplier Device Package | I2PAK |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 4.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 1.54 | |
Description
General part information
STB7NK80Z-1 Series
The SuperMESH series is obtained through an extreme optimization of STs well established strip-based PowerMESH layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.
Such series complements ST full range of high voltage Power MOSFETs including revolutionary MDmesh products.
Documents
Technical documentation and resources