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STMICROELECTRONICS L4941BDT-TR
Discrete Semiconductor Products

STD8N65M5

Active
STMicroelectronics

POWER MOSFET, N CHANNEL, 7 A, 650 V, 0.56 OHM, 10 V, 4 V ROHS COMPLIANT: YES

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STMICROELECTRONICS L4941BDT-TR
Discrete Semiconductor Products

STD8N65M5

Active
STMicroelectronics

POWER MOSFET, N CHANNEL, 7 A, 650 V, 0.56 OHM, 10 V, 4 V ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

SpecificationSTD8N65M5
Current - Continuous Drain (Id) @ 25°C7 A
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs15 nC
Input Capacitance (Ciss) (Max) @ Vds690 pF
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseTO-252-3, SC-63, DPAK (2 Leads + Tab)
Power Dissipation (Max) [Max]70 W
Rds On (Max) @ Id, Vgs600 mOhm
Supplier Device PackageDPAK
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 3769$ 1.63
NewarkEach 1$ 2.87
10$ 2.25
100$ 1.86
500$ 1.72
1000$ 1.65
2500$ 1.64
5000$ 1.62

Description

General part information

STD8N65M5 Series

These devices are N-channel Power MOSFETs based on the MDmesh M5 innovative vertical process technology combined with the well-known PowerMESH horizontal layout. The resulting products offer extremely low on-resistance, making them particularly suitable for applications requiring high power and superior efficiency.