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ONSEMI FDMC2523P
Discrete Semiconductor Products

FDMC2523P

Active
ON Semiconductor

MOSFET TRANSISTOR, P CHANNEL, 3 A, 150 V, 1.5 OHM, 10 V, 3.8 V ROHS COMPLIANT: YES

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ONSEMI FDMC2523P
Discrete Semiconductor Products

FDMC2523P

Active
ON Semiconductor

MOSFET TRANSISTOR, P CHANNEL, 3 A, 150 V, 1.5 OHM, 10 V, 3.8 V ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

SpecificationFDMC2523P
Current - Continuous Drain (Id) @ 25°C3 A
Drain to Source Voltage (Vdss)150 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]9 nC
Input Capacitance (Ciss) (Max) @ Vds270 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerWDFN
Power Dissipation (Max)42 W
Rds On (Max) @ Id, Vgs1.5 Ohm
Supplier Device Package8-MLP (3.3x3.3)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.54
10$ 1.28
100$ 1.02
500$ 0.86
1000$ 0.73
Digi-Reel® 1$ 1.54
10$ 1.28
100$ 1.02
500$ 0.86
1000$ 0.73
Tape & Reel (TR) 3000$ 0.69
6000$ 0.67
9000$ 0.65
NewarkEach (Supplied on Cut Tape) 1$ 1.74
10$ 1.23
25$ 1.12
50$ 1.02
ON SemiconductorN/A 1$ 0.59

Description

General part information

FDMC2523P Series

These P-Channel MOSFET enhancement mode power field effect transistors are produced using a proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.