STP12NM50FP
ActivePOWER MOSFET, N CHANNEL, 550 V, 12 A, 350 MILLIOHMS, TO-220FP, 3 PINS, THROUGH HOLE
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STP12NM50FP
ActivePOWER MOSFET, N CHANNEL, 550 V, 12 A, 350 MILLIOHMS, TO-220FP, 3 PINS, THROUGH HOLE
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Technical Specifications
Parameters and characteristics for this part
| Specification | STP12NM50FP |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 12 A |
| Drain to Source Voltage (Vdss) | 500 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 39 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 1000 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -65 °C |
| Package / Case | TO-220-3 Full Pack |
| Power Dissipation (Max) | 35 W |
| Rds On (Max) @ Id, Vgs | 350 mOhm |
| Supplier Device Package | TO-220FP |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STP12NM50FP Series
These N-channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh technology, which associates the multiple drain process with the company's PowerMESH horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market.
Documents
Technical documentation and resources