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SIHP050N60E-GE3
Discrete Semiconductor Products

IRFZ44RPBF-BE3

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SIHP050N60E-GE3
Discrete Semiconductor Products

IRFZ44RPBF-BE3

Active

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationIRFZ44RPBF-BE3
Current - Continuous Drain (Id) @ 25°C50 A
Drain to Source Voltage (Vdss)60 V
FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds1900 pF
Mounting TypeThrough Hole
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3
Power Dissipation (Max)150 W
Rds On (Max) @ Id, Vgs28 mOhm
Supplier Device PackageTO-220AB
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 3.04
50$ 1.25
100$ 1.23
500$ 1.20
1000$ 1.12

Description

General part information

IRFZ44 Series

N-Channel 60 V 50A (Tc) 150W (Tc) Through Hole TO-220AB

Documents

Technical documentation and resources