IRFZ44 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 60V 50A D2PAK
| Part | FET Type | Vgs (Max) | Technology | Operating Temperature [Min] | Operating Temperature [Max] | Vgs(th) (Max) @ Id | Package / Case | Rds On (Max) @ Id, Vgs | Drive Voltage (Max Rds On, Min Rds On) | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | N-Channel | 20 V | MOSFET (Metal Oxide) | -55 °C | 175 ░C | 4 V | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 28 mOhm | 10 V | TO-263 (D2PAK) | 50 A | 3.7 W 150 W | Surface Mount | 1900 pF | 60 V |
Vishay General Semiconductor - Diodes Division | N-Channel | 20 V | MOSFET (Metal Oxide) | -55 °C | 175 ░C | 4 V | TO-220-3 | 28 mOhm | TO-220AB | 50 A | 150 W | Through Hole | 1900 pF | 60 V | |
Vishay General Semiconductor - Diodes Division | N-Channel | 20 V | MOSFET (Metal Oxide) | -55 °C | 175 ░C | 4 V | TO-220-3 | 28 mOhm | 10 V | TO-220AB | 50 A | 150 W | Through Hole | 1900 pF | 60 V |
Vishay General Semiconductor - Diodes Division | N-Channel | 20 V | MOSFET (Metal Oxide) | -55 °C | 175 ░C | 4 V | TO-220-3 | 28 mOhm | 10 V | TO-220AB | 50 A | 150 W | Through Hole | 1900 pF | 60 V |
Vishay General Semiconductor - Diodes Division | N-Channel | 20 V | MOSFET (Metal Oxide) | -55 °C | 175 ░C | 4 V | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 28 mOhm | 10 V | TO-263 (D2PAK) | 50 A | 3.7 W 150 W | Surface Mount | 1900 pF | 60 V |