Discrete Semiconductor Products

SI7858BDP-T1-GE3

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MOSFET N-CH 12V 40A PPAK SO-8

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Discrete Semiconductor Products

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MOSFET N-CH 12V 40A PPAK SO-8

Technical Specifications

Parameters and characteristics for this part

Specification	SI7858BDP-T1-GE3

Drain to Source Voltage (Vdss)	12 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	84 nC
Input Capacitance (Ciss) (Max) @ Vds	5760 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8
Power Dissipation (Max)	5 W, 48 W
Rds On (Max) @ Id, Vgs	2.5 mOhm
Supplier Device Package	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1 V

Part	Power Dissipation (Max)	Technology	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Type	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs [Max]
Vishay General Semiconductor - Diodes Division SI7858BDP-T1-GE3	5 W 48 W	MOSFET (Metal Oxide)	1 V	2.5 mOhm	12 V	PowerPAK® SO-8	-55 °C	150 °C	1.8 V 4.5 V	PowerPAK® SO-8	5760 pF	8 V	N-Channel	Surface Mount	84 nC
Vishay General Semiconductor - Diodes Division SI7858ADP-T1-GE3	1.9 W	MOSFET (Metal Oxide)	1.5 V		12 V	PowerPAK® SO-8	-55 °C	150 °C	2.5 V 4.5 V	PowerPAK® SO-8	5700 pF	8 V	N-Channel	Surface Mount	80 nC	20 A	2.6 mOhm

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General part information

N-Channel 12 V 40A (Tc) 5W (Ta), 48W (Tc) Surface Mount PowerPAK® SO-8

Technical documentation and resources