SI7858 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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MOSFET N-CH 12V 40A PPAK SO-8
| Part | Power Dissipation (Max) | Technology | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) | Supplier Device Package | Operating Temperature [Min] | Operating Temperature [Max] | Drive Voltage (Max Rds On, Min Rds On) | Package / Case | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Type | Mounting Type | Gate Charge (Qg) (Max) @ Vgs [Max] | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 5 W 48 W | MOSFET (Metal Oxide) | 1 V | 2.5 mOhm | 12 V | PowerPAK® SO-8 | -55 °C | 150 °C | 1.8 V 4.5 V | PowerPAK® SO-8 | 5760 pF | 8 V | N-Channel | Surface Mount | 84 nC | ||
Vishay General Semiconductor - Diodes Division | 1.9 W | MOSFET (Metal Oxide) | 1.5 V | 12 V | PowerPAK® SO-8 | -55 °C | 150 °C | 2.5 V 4.5 V | PowerPAK® SO-8 | 5700 pF | 8 V | N-Channel | Surface Mount | 80 nC | 20 A | 2.6 mOhm |