FCP360N65S3R0
NRNDPOWER MOSFET, N-CHANNEL, SUPERFET<SUP>®</SUP> III, EASY DRIVE, 650 V, 10 A, 360 MΩ, TO-220
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FCP360N65S3R0
NRNDPOWER MOSFET, N-CHANNEL, SUPERFET<SUP>®</SUP> III, EASY DRIVE, 650 V, 10 A, 360 MΩ, TO-220
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Technical Specifications
Parameters and characteristics for this part
| Specification | FCP360N65S3R0 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 10 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 18 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 730 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 |
| Power Dissipation (Max) | 83 W |
| Rds On (Max) @ Id, Vgs | 360 mOhm |
| Supplier Device Package | TO-220-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 4.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 2.44 | |
| 10 | $ 1.59 | |||
| 100 | $ 1.11 | |||
| 500 | $ 1.11 | |||
| Newark | Each | 500 | $ 1.65 | |
| 1000 | $ 1.48 | |||
| 2500 | $ 1.19 | |||
| 5000 | $ 1.16 | |||
| ON Semiconductor | N/A | 1 | $ 1.02 | |
Description
General part information
FCP360N65S3R0 Series
SUPERFET III MOSFET is ON Semiconductor’s brand−new highvoltage super−junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on−resistance and lower gatecharge performance. This advanced technology is tailored to minimizeconduction loss, provide superior switching performance, andwithstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation.
Documents
Technical documentation and resources