Discrete Semiconductor Products

ST13003-K

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TRANS GP BJT NPN 400V 1.5A 40000MW 3-PIN(3+TAB) SOT-32 BAG

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Discrete Semiconductor Products

Active

TRANS GP BJT NPN 400V 1.5A 40000MW 3-PIN(3+TAB) SOT-32 BAG

Technical Specifications

Parameters and characteristics for this part

Specification	ST13003-K

Current - Collector (Ic) (Max) [Max]	1.5 A
Current - Collector Cutoff (Max) [Max]	1 mA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	5
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	TO-225AA, TO-126-3
Power - Max [Max]	40 W
Supplier Device Package	SOT-32-3
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max) [Max]	400 V

High voltage fast-switching NPN power transistor

Part	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Supplier Device Package	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Mounting Type	Transistor Type	Current - Collector Cutoff (Max) [Max]	Power - Max [Max]
STMicroelectronics ST13003-K	5	SOT-32-3	TO-126-3 TO-225AA	-40 °C	150 °C	1.5 A	400 V	Through Hole	NPN	1 mA	40 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability.

It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.

Technical documentation and resources