Specification	FQL40N50F

Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	200 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	7500 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-264AA, TO-264-3
Power Dissipation (Max)	460 W
Rds On (Max) @ Id, Vgs	110 mOhm
Supplier Device Package	TO-264-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

FQL40N50F Series

Power MOSFET, N-Channel, QFET®, FRFET®, 500 V, 40 A, 110 mΩ, TO-264

Part	Drain to Source Voltage (Vdss)	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Technology	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Vgs (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package	FET Type	Package / Case
ON Semiconductor FQL40N50F	500 V	Through Hole	10 V	5 V	MOSFET (Metal Oxide)	200 nC	460 W	30 V	110 mOhm	-55 °C	150 °C	7500 pF	TO-264-3	N-Channel	TO-264-3 TO-264AA

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FQL40N50F Series

This N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.