FQL40N50F Series

Power MOSFET, N-Channel, QFET®, FRFET®, 500 V, 40 A, 110 mΩ, TO-264

Catalog

Power MOSFET, N-Channel, QFET®, FRFET®, 500 V, 40 A, 110 mΩ, TO-264

Part	Drain to Source Voltage (Vdss)	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Technology	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Vgs (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package	FET Type	Package / Case
ON Semiconductor FQL40N50F	500 V	Through Hole	10 V	5 V	MOSFET (Metal Oxide)	200 nC	460 W	30 V	110 mOhm	-55 °C	150 °C	7500 pF	TO-264-3	N-Channel	TO-264-3 TO-264AA

Catalog

Power MOSFET, N-Channel, QFET®, FRFET®, 500 V, 40 A, 110 mΩ, TO-264

Key Features

• 40A, 500V, RDS(on)= 110mΩ(Max.) @VGS= 10 V, ID= 20A

• Low gate charge ( Typ. 155nC)

• Low Crss( Typ. 95pF)

• 100% avalanche tested

• Fast recovery body diode ( Max. 250ns )

Description

This N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.