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ONSEMI NVMYS025N06CLTWG
Discrete Semiconductor Products

NVMYS025N06CLTWG

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ON Semiconductor

POWER MOSFET, SINGLE N-CHANNEL, 60 V, 30MΩ, 20 A

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ONSEMI NVMYS025N06CLTWG
Discrete Semiconductor Products

NVMYS025N06CLTWG

Active
ON Semiconductor

POWER MOSFET, SINGLE N-CHANNEL, 60 V, 30MΩ, 20 A

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationNVMYS025N06CLTWG
Current - Continuous Drain (Id) @ 25°C21 A, 8.5 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs5.8 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds330 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseSOT-1023, 4-LFPAK
Power Dissipation (Max)24 W, 3.8 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs27.5 mOhm
Supplier Device PackageLFPAK4
Supplier Device Package [x]5
Supplier Device Package [y]6
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.30
10$ 0.81
100$ 0.54
500$ 0.42
1000$ 0.38
Digi-Reel® 1$ 1.30
10$ 0.81
100$ 0.54
500$ 0.42
1000$ 0.38
Tape & Reel (TR) 3000$ 0.33
6000$ 0.31
9000$ 0.30
NewarkEach (Supplied on Cut Tape) 1$ 1.10
10$ 0.76
25$ 0.68
50$ 0.60
100$ 0.53
250$ 0.47
500$ 0.41
1000$ 0.38
ON SemiconductorN/A 1$ 0.27

Description

General part information

NVMYS025N06CL Series

Automotive Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications requiring enhanced board level reliability.