NVMYS025N06CL Series

Power MOSFET, Single N-Channel, 60 V, 30mΩ, 20 A

Catalog

Power MOSFET, Single N-Channel, 60 V, 30mΩ, 20 A

Part	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Qualification	Supplier Device Package [x]	Supplier Device Package	Supplier Device Package [y]	Grade	FET Type	Vgs(th) (Max) @ Id	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Technology	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Rds On (Max) @ Id, Vgs
ON Semiconductor NVMYS025N06CLTWG	330 pF	-55 °C	175 ░C	SOT-1023 4-LFPAK	AEC-Q101	5	LFPAK4	6	Automotive	N-Channel	2 V	20 V	4.5 V 10 V	MOSFET (Metal Oxide)	3.8 W 24 W	60 V	8.5 A 21 A	5.8 nC	Surface Mount	27.5 mOhm

Catalog

Power MOSFET, Single N-Channel, 60 V, 30mΩ, 20 A

Key Features

• Small Footprint (5x6 mm)

• Low RDS (ON)

• Low QGand Capacitance

• LFPAK4 Package, Industry Standard

• AEC−Q101 Qualified and PPAP Capable

• These Devices are Pb−Free and are RoHS Compliant

Description

Automotive Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications requiring enhanced board level reliability.