Discrete Semiconductor Products

AIMCQ120R080M1TXTMA1

Active

INFINEON

SIC MOSFETS TAILORED TO ADDRESS OBC/DC-DC APPLICATIONS FOR 800V AUTOMOTIVE ARCHITECTURE

Discrete Semiconductor Products

AIMCQ120R080M1TXTMA1

Active

INFINEON

SIC MOSFETS TAILORED TO ADDRESS OBC/DC-DC APPLICATIONS FOR 800V AUTOMOTIVE ARCHITECTURE

Specifications Series Pricing CAD Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	AIMCQ120R080M1TXTMA1

Current - Continuous Drain (Id) (Tc)	34 A
Drain to Source Voltage (Vdss)	1200 V
Drive Voltage (Max Rds On)	18 V
Drive Voltage (Min Rds On)	20 V
FET Type	N-Channel
Gate Charge (Max)	24 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	671 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	22-PowerBSOP Module
Package Name	PG-HDSOP-22
Power Dissipation (Max)	211 W
Qualification	AEC-Q101
Rds On (Max)	100 mOhm
Technology	SiCFET (Silicon Carbide)
Vgs (Max) Negative	-10 V
Vgs (Max) Positive	25 V
Vgs(th) (Max)	5.1 V

1200V G1 Series

Part	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max)	Grade	Vgs(th) (Max)	Qualification	Package Name	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	FET Type	Current - Continuous Drain (Id) (Tc)	Mounting Type	Rds On (Max)	Vgs (Max) Negative	Vgs (Max) Positive	Gate Charge (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Package / Case	Technology	Power Dissipation (Max)
INFINEON AIMCQ120R080M1TXTMA1	1200 V	671 pF	Automotive	5.1 V	AEC-Q101	PG-HDSOP-22	20 V	18 V	N-Channel	34 A	Surface Mount	100 mOhm	-10 V	25 V	24 nC	-55 °C	175 °C	22-PowerBSOP Module	SiCFET (Silicon Carbide)	211 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	Cut Tape (CT)	1	$ 9.34	<4d
		10	$ 6.38
		100	$ 4.71
	Tape & Reel (TR)	750	$ 3.86	<4d
		1500	$ 3.85
Mouser	N/A	1	$ 9.58	30d+
		10	$ 8.21
		100	$ 6.84
		500	$ 6.04
		750	$ 5.43
Newark	Cut Tape	1	$ 6.98	<3d
		10	$ 4.78
		25	$ 4.44
		50	$ 4.10
		100	$ 3.77

CAD

3D models and CAD resources for this part

Description

General part information

1200V G1 Series

The CoolSiC™ Automotive MOSFET 1200 V in Q-DPAK package is tailored to address OBC/DC-DC applications for 800V Automotive architecture. Leveraging Top-Side-Cooling (TSC) technology, it can provide customers with an outstanding thermal performance, easier assembly and reduced system cost. Compared to back-side cooling, TSC provides an optimized PCB assembly, thus eliminating parasitic effects and providing much lower stray inductances.

Documents

Technical documentation and resources

AIMCQ120R080M1TXTMA1 | Datasheet

Datasheet