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AIMCQ120R080M1TXTMA1
Discrete Semiconductor Products

AIMCQ120R080M1TXTMA1

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INFINEON

SIC MOSFETS TAILORED TO ADDRESS OBC/DC-DC APPLICATIONS FOR 800V AUTOMOTIVE ARCHITECTURE

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AIMCQ120R080M1TXTMA1
Discrete Semiconductor Products

AIMCQ120R080M1TXTMA1

Active
INFINEON

SIC MOSFETS TAILORED TO ADDRESS OBC/DC-DC APPLICATIONS FOR 800V AUTOMOTIVE ARCHITECTURE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationAIMCQ120R080M1TXTMA1
Current - Continuous Drain (Id) @ 25°C34 A
Drain to Source Voltage (Vdss)1.2 kV
Drive Voltage (Max Rds On, Min Rds On) [Max]18 V
Drive Voltage (Max Rds On, Min Rds On) [Min]20 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs24 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds671 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / Case22-PowerBSOP Module
Power Dissipation (Max)211 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs100 mOhm
Supplier Device PackagePG-HDSOP-22
Vgs (Max) [Max]25 V
Vgs (Max) [Min]-10 V
Vgs(th) (Max) @ Id5.1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 654$ 9.80
MouserN/A 1$ 9.58
10$ 8.21
100$ 6.84
500$ 6.04
750$ 5.43
NewarkEach (Supplied on Cut Tape) 1$ 9.74
10$ 7.58
25$ 7.04
50$ 6.75
100$ 6.45
250$ 6.17

Description

General part information

1200V G1 Series

The CoolSiC™ Automotive MOSFET 1200 V in Q-DPAK package is tailored to address OBC/DC-DC applications for 800V Automotive architecture. Leveraging Top-Side-Cooling (TSC) technology, it can provide customers with an outstanding thermal performance, easier assembly and reduced system cost. Compared to back-side cooling, TSC provides an optimized PCB assembly, thus eliminating parasitic effects and providing much lower stray inductances.

Documents

Technical documentation and resources