
AIMCQ120R080M1TXTMA1
ActiveSIC MOSFETS TAILORED TO ADDRESS OBC/DC-DC APPLICATIONS FOR 800V AUTOMOTIVE ARCHITECTURE
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AIMCQ120R080M1TXTMA1
ActiveSIC MOSFETS TAILORED TO ADDRESS OBC/DC-DC APPLICATIONS FOR 800V AUTOMOTIVE ARCHITECTURE
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Technical Specifications
Parameters and characteristics for this part
| Specification | AIMCQ120R080M1TXTMA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 34 A |
| Drain to Source Voltage (Vdss) | 1.2 kV |
| Drive Voltage (Max Rds On, Min Rds On) [Max] | 18 V |
| Drive Voltage (Max Rds On, Min Rds On) [Min] | 20 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds | 671 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 22-PowerBSOP Module |
| Power Dissipation (Max) | 211 W |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 100 mOhm |
| Supplier Device Package | PG-HDSOP-22 |
| Vgs (Max) [Max] | 25 V |
| Vgs (Max) [Min] | -10 V |
| Vgs(th) (Max) @ Id | 5.1 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
1200V G1 Series
The CoolSiC™ Automotive MOSFET 1200 V in Q-DPAK package is tailored to address OBC/DC-DC applications for 800V Automotive architecture. Leveraging Top-Side-Cooling (TSC) technology, it can provide customers with an outstanding thermal performance, easier assembly and reduced system cost. Compared to back-side cooling, TSC provides an optimized PCB assembly, thus eliminating parasitic effects and providing much lower stray inductances.
Documents
Technical documentation and resources