1200V G1 Series
Manufacturer: INFINEON
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SIC MOSFETS TAILORED TO ADDRESS OBC/DC-DC APPLICATIONS FOR 800V AUTOMOTIVE ARCHITECTURE
| Part | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) | Grade | Vgs(th) (Max) | Qualification | Package Name | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | FET Type | Current - Continuous Drain (Id) (Tc) | Mounting Type | Rds On (Max) | Vgs (Max) Negative | Vgs (Max) Positive | Gate Charge (Max) | Operating Temperature (Min) | Operating Temperature (Max) | Package / Case | Technology | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 INFINEON | 1200 V | 671 pF | Automotive | 5.1 V | AEC-Q101 | PG-HDSOP-22 | 20 V | 18 V | N-Channel | 34 A | Surface Mount | 100 mOhm | -10 V | 25 V | 24 nC | -55 °C | 175 °C | 22-PowerBSOP Module | SiCFET (Silicon Carbide) | 211 W |