Integrated Circuits (ICs)

IS43LQ16128A-062TBLI

Active

DRAM 2G, 1.06-1.17/1.70-1.95V, LPDDR4, 128MX16, 1600MHZ, 200 BALL BGA (10MMX14.5MM, 1.1MM MAX THICKNESS) ROHS

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Integrated Circuits (ICs)

Active

DRAM 2G, 1.06-1.17/1.70-1.95V, LPDDR4, 128MX16, 1600MHZ, 200 BALL BGA (10MMX14.5MM, 1.1MM MAX THICKNESS) ROHS

Technical Specifications

Parameters and characteristics for this part

Part	Voltage - Supply [Min]	Voltage - Supply [Max]	Package / Case	Memory Type	Memory Format	Memory Organization	Technology	Supplier Device Package	Clock Frequency	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Memory Interface	Memory Size	Access Time	Supplier Device Package [y]	Supplier Device Package [x]	Write Cycle Time - Word, Page
ISSI, Integrated Silicon Solution Inc IS43LQ16128A-062TBLI	1.06 V 1.7 V	1.17 V 1.95 V	200-TFBGA	Volatile	DRAM	128M x 16	SDRAM - Mobile LPDDR4	200-TFBGA (10x14.5)	1600 MHz	-40 °C	95 °C	Surface Mount	LVSTL	2 Gbit
ISSI, Integrated Silicon Solution Inc IS43LQ16128A-062BLI	1.06 V 1.7 V	1.17 V 1.95 V	200-WFBGA	Volatile	DRAM	128M x 16	SDRAM - Mobile LPDDR4	200-VFBGA	1600 MHz	-40 °C	95 °C	Surface Mount	LVSTL	2 Gbit	3.5 ns	14.5	10	18 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

SDRAM - Mobile LPDDR4 Memory IC 2Gbit LVSTL 1.6 GHz 200-TFBGA (10x14.5)

Technical documentation and resources

No documents available