IS43LQ16128 Series
Manufacturer: ISSI, Integrated Silicon Solution Inc
DRAM 2G, 1.06-1.17/1.70-1.95V, LPDDR4, 128MX16, 1600MHZ, 200 BALL BGA (10MMX14.5MM, 1.1MM MAX THICKNESS) ROHS
| Part | Voltage - Supply [Min] | Voltage - Supply [Max] | Package / Case | Memory Type | Memory Format | Memory Organization | Technology | Supplier Device Package | Clock Frequency | Operating Temperature [Min] | Operating Temperature [Max] | Mounting Type | Memory Interface | Memory Size | Access Time | Supplier Device Package [y] | Supplier Device Package [x] | Write Cycle Time - Word, Page |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
ISSI, Integrated Silicon Solution Inc | 1.06 V 1.7 V | 1.17 V 1.95 V | 200-TFBGA | Volatile | DRAM | 128M x 16 | SDRAM - Mobile LPDDR4 | 200-TFBGA (10x14.5) | 1600 MHz | -40 °C | 95 °C | Surface Mount | LVSTL | 2 Gbit | ||||
ISSI, Integrated Silicon Solution Inc | 1.06 V 1.7 V | 1.17 V 1.95 V | 200-WFBGA | Volatile | DRAM | 128M x 16 | SDRAM - Mobile LPDDR4 | 200-VFBGA | 1600 MHz | -40 °C | 95 °C | Surface Mount | LVSTL | 2 Gbit | 3.5 ns | 14.5 | 10 | 18 ns |