Deep-Dive with AI
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Deep-Dive with AI
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Technical Specifications
Parameters and characteristics for this part
| Specification | MBRT40040 |
|---|---|
| Current - Average Rectified (Io) (per Diode) | 200 A |
| Current - Reverse Leakage @ Vr | 1 mA |
| Diode Configuration | 1 Pair Common Cathode |
| Mounting Type | Chassis Mount |
| Operating Temperature - Junction [Max] | 150 °C |
| Operating Temperature - Junction [Min] | -55 °C |
| Package / Case | Three Tower |
| Speed | 500 ns, 200 mA |
| Supplier Device Package | Three Tower |
| Technology | Schottky |
| Voltage - DC Reverse (Vr) (Max) [Max] | 40 V |
| Voltage - Forward (Vf) (Max) @ If | 750 mV |
| Part | Technology | Operating Temperature - Junction [Min] | Operating Temperature - Junction [Max] | Current - Reverse Leakage @ Vr | Diode Configuration | Speed | Package / Case | Voltage - DC Reverse (Vr) (Max) [Max] | Voltage - Forward (Vf) (Max) @ If | Supplier Device Package | Current - Average Rectified (Io) (per Diode) | Mounting Type | Voltage - Forward (Vf) (Max) @ If [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor | Schottky | -55 °C | 150 °C | 1 mA | 1 Pair Common Anode | 200 mA 500 ns | Three Tower | 40 V | 750 mV | Three Tower | 200 A | Chassis Mount | |
GeneSiC Semiconductor | Schottky | -55 °C | 150 °C | 3 mA | 1 Pair Common Anode | 200 mA 500 ns | Three Tower | 35 V | 600 mV | Three Tower | 200 A | Chassis Mount | |
GeneSiC Semiconductor | Schottky | -55 °C | 150 °C | 3 mA | 1 Pair Common Cathode | 200 mA 500 ns | Three Tower | 35 V | 600 mV | Three Tower | 200 A | Chassis Mount | |
GeneSiC Semiconductor | Schottky | -55 °C | 150 °C | 1 mA | 1 Pair Common Cathode | 200 mA 500 ns | Three Tower | 60 V | Three Tower | 200 A | Chassis Mount | 800 mV | |
GeneSiC Semiconductor | Schottky | -55 °C | 150 °C | 3 mA | 1 Pair Common Anode | 200 mA 500 ns | Three Tower | 20 V | 580 mV | Three Tower | 200 A | Chassis Mount | |
GeneSiC Semiconductor | Schottky | -55 °C | 150 °C | 1 mA | 1 Pair Common Anode | 200 mA 500 ns | Three Tower | 880 mV | Three Tower | 200 A | Chassis Mount | ||
GeneSiC Semiconductor | Reverse Polarity Schottky | -55 °C | 150 °C | 1 mA | 1 Pair Common Anode | 200 mA 500 ns | Three Tower | 35 V | 750 mV | Three Tower | 200 A | Chassis Mount | |
GeneSiC Semiconductor | Schottky | -55 °C | 150 °C | 1 mA | 1 Pair Common Cathode | 200 mA 500 ns | Three Tower | 200 V | 920 mV | Three Tower | 200 A | Chassis Mount | |
GeneSiC Semiconductor | Schottky | -55 °C | 150 °C | 1 mA | 1 Pair Common Cathode | 200 mA 500 ns | Three Tower | 40 V | 750 mV | Three Tower | 200 A | Chassis Mount | |
GeneSiC Semiconductor | Schottky | -55 °C | 150 °C | 1 mA | 1 Pair Common Cathode | 200 mA 500 ns | Three Tower | 80 V | 880 mV | Three Tower | 200 A | Chassis Mount |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 80 | $ 98.74 | |
| N/A | 0 | $ 102.46 | ||
| 20 | $ 76.60 | |||
Description
General part information
MBRT400 Series
Diode Array 1 Pair Common Cathode 40 V 200A Chassis Mount Three Tower
Documents
Technical documentation and resources