MBRT400 Series
Manufacturer: GeneSiC Semiconductor
DIODE MOD SCHOTT 40V 200A 3TOWER
| Part | Technology | Operating Temperature - Junction [Min] | Operating Temperature - Junction [Max] | Current - Reverse Leakage @ Vr | Diode Configuration | Speed | Package / Case | Voltage - DC Reverse (Vr) (Max) [Max] | Voltage - Forward (Vf) (Max) @ If | Supplier Device Package | Current - Average Rectified (Io) (per Diode) | Mounting Type | Voltage - Forward (Vf) (Max) @ If [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor | Schottky | -55 °C | 150 °C | 1 mA | 1 Pair Common Anode | 200 mA 500 ns | Three Tower | 40 V | 750 mV | Three Tower | 200 A | Chassis Mount | |
GeneSiC Semiconductor | Schottky | -55 °C | 150 °C | 3 mA | 1 Pair Common Anode | 200 mA 500 ns | Three Tower | 35 V | 600 mV | Three Tower | 200 A | Chassis Mount | |
GeneSiC Semiconductor | Schottky | -55 °C | 150 °C | 3 mA | 1 Pair Common Cathode | 200 mA 500 ns | Three Tower | 35 V | 600 mV | Three Tower | 200 A | Chassis Mount | |
GeneSiC Semiconductor | Schottky | -55 °C | 150 °C | 1 mA | 1 Pair Common Cathode | 200 mA 500 ns | Three Tower | 60 V | Three Tower | 200 A | Chassis Mount | 800 mV | |
GeneSiC Semiconductor | Schottky | -55 °C | 150 °C | 3 mA | 1 Pair Common Anode | 200 mA 500 ns | Three Tower | 20 V | 580 mV | Three Tower | 200 A | Chassis Mount | |
GeneSiC Semiconductor | Schottky | -55 °C | 150 °C | 1 mA | 1 Pair Common Anode | 200 mA 500 ns | Three Tower | 880 mV | Three Tower | 200 A | Chassis Mount | ||
GeneSiC Semiconductor | Reverse Polarity Schottky | -55 °C | 150 °C | 1 mA | 1 Pair Common Anode | 200 mA 500 ns | Three Tower | 35 V | 750 mV | Three Tower | 200 A | Chassis Mount | |
GeneSiC Semiconductor | Schottky | -55 °C | 150 °C | 1 mA | 1 Pair Common Cathode | 200 mA 500 ns | Three Tower | 200 V | 920 mV | Three Tower | 200 A | Chassis Mount | |
GeneSiC Semiconductor | Schottky | -55 °C | 150 °C | 1 mA | 1 Pair Common Cathode | 200 mA 500 ns | Three Tower | 40 V | 750 mV | Three Tower | 200 A | Chassis Mount | |
GeneSiC Semiconductor | Schottky | -55 °C | 150 °C | 1 mA | 1 Pair Common Cathode | 200 mA 500 ns | Three Tower | 80 V | 880 mV | Three Tower | 200 A | Chassis Mount |