Specification	FQD19N10TM

Current - Continuous Drain (Id) @ 25°C	15.6 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	25 nC
Input Capacitance (Ciss) (Max) @ Vds	780 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	50 W, 2.5 W
Supplier Device Package	TO-252AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	4 V

FQD19N10L Series

Power MOSFET, N-Channel, Logic Level, QFET®, 100 V, 15.6 A, 100 mΩ, DPAK

Part	Drain to Source Voltage (Vdss)	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Technology	Power Dissipation (Max)	Package / Case	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Gate Charge (Qg) (Max) @ Vgs
ON Semiconductor FQD19N10TM	100 V	25 V	780 pF	MOSFET (Metal Oxide)	2.5 W 50 W	DPAK (2 Leads + Tab) SC-63 TO-252-3	Surface Mount	15.6 A	4 V	TO-252AA	10 V	N-Channel	-55 °C	150 °C	25 nC
ON Semiconductor FQD19N10LTM	100 V	20 V	870 pF	MOSFET (Metal Oxide)	2.5 W 50 W	DPAK (2 Leads + Tab) SC-63 TO-252-3	Surface Mount	15.6 A	2 V	TO-252AA		N-Channel	-55 °C	150 °C		10 V	5 V	18 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

TME	N/A	1	$ 1.65
		5	$ 1.27
		25	$ 0.96
		100	$ 0.76
		500	$ 0.71

Description

General part information

FQD19N10L Series

This N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.