FQD19N10L Series

Power MOSFET, N-Channel, Logic Level, QFET®, 100 V, 15.6 A, 100 mΩ, DPAK

Catalog

Power MOSFET, N-Channel, Logic Level, QFET®, 100 V, 15.6 A, 100 mΩ, DPAK

Part	Drain to Source Voltage (Vdss)	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Technology	Power Dissipation (Max)	Package / Case	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Gate Charge (Qg) (Max) @ Vgs
ON Semiconductor FQD19N10TM	100 V	25 V	780 pF	MOSFET (Metal Oxide)	2.5 W 50 W	DPAK (2 Leads + Tab) SC-63 TO-252-3	Surface Mount	15.6 A	4 V	TO-252AA	10 V	N-Channel	-55 °C	150 °C	25 nC
ON Semiconductor FQD19N10LTM	100 V	20 V	870 pF	MOSFET (Metal Oxide)	2.5 W 50 W	DPAK (2 Leads + Tab) SC-63 TO-252-3	Surface Mount	15.6 A	2 V	TO-252AA		N-Channel	-55 °C	150 °C		10 V	5 V	18 nC

Catalog

Power MOSFET, N-Channel, Logic Level, QFET®, 100 V, 15.6 A, 100 mΩ, DPAK

Key Features

• 15.6A, 100V, RDS(on)= 100mΩ(Max.) @VGS= 10 V, ID= 7.8A

• Low gate charge ( Typ. 14nC)

• Low Crss( Typ. 35pF)

• 100% avalanche tested

Description

This N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.