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TO247-3
Discrete Semiconductor Products

STPSC20H12CWL

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STMicroelectronics

SILICON CARBIDE SCHOTTKY DIODE, DUAL COMMON CATHODE, 1.2 KV, 20 A, 57 NC, TO-247

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DocumentsDatasheet+11
TO247-3
Discrete Semiconductor Products

STPSC20H12CWL

Active
STMicroelectronics

SILICON CARBIDE SCHOTTKY DIODE, DUAL COMMON CATHODE, 1.2 KV, 20 A, 57 NC, TO-247

Deep-Dive with AI

DocumentsDatasheet+11

Technical Specifications

Parameters and characteristics for this part

SpecificationSTPSC20H12CWL
Current - Average Rectified (Io) (per Diode)25 A
Current - Reverse Leakage @ Vr60 µA
Diode Configuration1 Pair Common Cathode
Mounting TypeThrough Hole
Operating Temperature - Junction [Max]175 ░C
Operating Temperature - Junction [Min]-40 °C
Package / CaseTO-247-3
Reverse Recovery Time (trr)0 ns
SpeedNo Recovery Time
Supplier Device PackageTO-247-3
TechnologySiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]1.2 kV
Voltage - Forward (Vf) (Max) @ If1.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 9.25
30$ 7.38
120$ 6.60
510$ 5.83
1020$ 5.24
2010$ 4.91
NewarkEach 1$ 7.31
10$ 5.67
25$ 5.36
60$ 5.13
120$ 4.91

Description

General part information

STPSC20H065CWLY Series

The SiC diode, available in DO-247 with long leads, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VFSchottky diode structure with a 1200 V rating. Thanks to the Schottky construction, no recovery is shown during turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.

Based on latest technology optimization, this diode has an improved forward surge current capability, making it ideal for use in PFC, where this ST SiC diode boosts the performance in hard switching conditions while bringing robustness to the design. Its high forward surge capability ensures a good robustness during transient phases.