Discrete Semiconductor Products
PBSS4112PANP-QX
ActiveNexperia USA Inc.
120 V, 1 A NPN/PNP LOW VCESAT (BISS) TRANSISTOR
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Discrete Semiconductor Products
PBSS4112PANP-QX
ActiveNexperia USA Inc.
120 V, 1 A NPN/PNP LOW VCESAT (BISS) TRANSISTOR
Technical Specifications
Parameters and characteristics for this part
| Specification | PBSS4112PANP-QX |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 1 A |
| Current - Collector Cutoff (Max) [Max] | 100 nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 190 hFE, 240 hFE |
| Frequency - Transition | 100 MHz, 120 MHz |
| Grade | Automotive |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | 6-UFDFN Exposed Pad |
| Power - Max [Max] | 510 mW |
| Qualification | AEC-Q101 |
| Supplier Device Package | 6-HUSON (2x2) |
| Transistor Type | 1 NPN, 1 PNP |
| Vce Saturation (Max) @ Ib, Ic | 260 mV, 480 mV |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 120 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 0.24 | |
Description
General part information
PBSS4112PANP-Q Series
NPN/PNP low VCEsattransistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
Documents
Technical documentation and resources