Catalog
120 V, 1 A NPN/PNP low VCEsat (BISS) transistor
Description
AI
NPN/PNP low VCEsattransistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
Beta
⌘K
120 V, 1 A NPN/PNP low VCEsat (BISS) transistor
120 V, 1 A NPN/PNP low VCEsat (BISS) transistor
| Part | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition | Transistor Type | Operating Temperature | Package / Case | Current - Collector Cutoff (Max) [Max] | Vce Saturation (Max) @ Ib, Ic | Power - Max [Max] | Qualification | Current - Collector (Ic) (Max) [Max] | Supplier Device Package | Mounting Type | Voltage - Collector Emitter Breakdown (Max) [Max] | Grade |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | 190 hFE 240 hFE | 100 MHz 120 MHz | 1 NPN 1 PNP | 150 °C | 6-UFDFN Exposed Pad | 100 nA | 260 mV 480 mV | 510 mW | AEC-Q101 | 1 A | 6-HUSON (2x2) | Surface Mount | 120 V | Automotive |