PSC20120LQ
Active1200 V, 20 A SIC SCHOTTKY DIODE IN TO247 R2P
Deep-Dive with AI
Search across all available documentation for this part.
PSC20120LQ
Active1200 V, 20 A SIC SCHOTTKY DIODE IN TO247 R2P
Technical Specifications
Parameters and characteristics for this part
| Specification | PSC20120LQ |
|---|---|
| Capacitance @ Vr, F | 1150 pf |
| Current - Reverse Leakage @ Vr | 180 µA |
| Mounting Type | Through Hole |
| Operating Temperature - Junction [Max] | 175 ░C |
| Operating Temperature - Junction [Min] | -55 °C |
| Package / Case | TO-247-2 |
| Reverse Recovery Time (trr) | 0 ns |
| Speed | 500 mA |
| Supplier Device Package | TO-247-2 |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) [Max] | 1.2 kV |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 13.72 | |
Description
General part information
PSC20120L Series
Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra high performance, low loss, high efficiency power conversion applications. The SiC Schottky diode encapsulated in a Real-2-Pin TO247 R2P (TO-247-2) through-hole power plastic package offers temperature independent capacitive turn-off, zero recovery switching behavior combined with an outstanding figure-of-merit (QCx VF). The Merged PiN Schottky (MPS) diode improves the robustness expressed in a high IFSM.
Documents
Technical documentation and resources