PSC20120L Series

1200 V, 20 A SiC Schottky diode in TO247 R2P

Catalog

1200 V, 20 A SiC Schottky diode in TO247 R2P

Part	Voltage - Forward (Vf) (Max) @ If	Speed	Technology	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Mounting Type	Reverse Recovery Time (trr)	Capacitance @ Vr, F	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Supplier Device Package
Nexperia USA Inc. PSC20120LQ	1.8 V	500 mA	SiC (Silicon Carbide) Schottky	180 µA	175 ░C	-55 °C	Through Hole	0 ns	1150 pf	1.2 kV	TO-247-2	TO-247-2

Catalog

1200 V, 20 A SiC Schottky diode in TO247 R2P

Description

Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra high performance, low loss, high efficiency power conversion applications. The SiC Schottky diode encapsulated in a Real-2-Pin TO247 R2P (TO-247-2) through-hole power plastic package offers temperature independent capacitive turn-off, zero recovery switching behavior combined with an outstanding figure-of-merit (QCx VF). The Merged PiN Schottky (MPS) diode improves the robustness expressed in a high IFSM.