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STGWA50M65DF2AG
Discrete Semiconductor Products

STGWA50M65DF2AG

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STMicroelectronics

AUTOMOTIVE-GRADE TRENCH GATE FIELD-STOP 650 V, 50 A LOW-LOSS M SERIES IGBT IN A TO-247 LONG LEADS PACKAGE

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DocumentsTN1378+7
STGWA50M65DF2AG
Discrete Semiconductor Products

STGWA50M65DF2AG

Active
STMicroelectronics

AUTOMOTIVE-GRADE TRENCH GATE FIELD-STOP 650 V, 50 A LOW-LOSS M SERIES IGBT IN A TO-247 LONG LEADS PACKAGE

Deep-Dive with AI

DocumentsTN1378+7

Technical Specifications

Parameters and characteristics for this part

SpecificationSTGWA50M65DF2AG
Current - Collector (Ic) (Max) [Max]119 A
Current - Collector Pulsed (Icm)207 A
Gate Charge147 nC
GradeAutomotive
IGBT TypeTrench Field Stop
Mounting TypeThrough Hole
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-247-3
Power - Max [Max]576 W
QualificationAEC-Q101
Reverse Recovery Time (trr)121.6 ns
Supplier Device PackageTO-247 Long Leads
Switching Energy1.4 mJ, 1.8 mJ
Td (on/off) @ 25°C [Max]143 ns
Td (on/off) @ 25°C [Min]29.8 ns
Test Condition6.8 Ohm, 50 A, 15 V, 400 V
Vce(on) (Max) @ Vge, Ic2 V
Voltage - Collector Emitter Breakdown (Max) [Max]650 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 546$ 6.08
NewarkEach 1$ 6.68
10$ 4.99
25$ 4.69
50$ 4.40
100$ 4.23

Description

General part information

STGWA50M65DF2AG Series

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthermore, the positive VCE(sat)temperature coefficient and the tight parameter distribution result in safer paralleling operation.