Technical Specifications
Parameters and characteristics for this part
| Specification | IPI80N06S405AKSA1 |
|---|---|
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 81 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds | 6500 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-262AA, TO-262-3 Long Leads, I2PAK |
| Power Dissipation (Max) | 107 W |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 5.7 mOhm |
| Supplier Device Package | PG-TO262-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
| Part | Power Dissipation (Max) | Grade | Vgs (Max) | Vgs(th) (Max) @ Id | Qualification | FET Type | Mounting Type | Operating Temperature [Max] | Operating Temperature [Min] | Drive Voltage (Max Rds On, Min Rds On) | Package / Case | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds [Max] | Rds On (Max) @ Id, Vgs | Technology | Power Dissipation (Max) [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | Input Capacitance (Ciss) (Max) @ Vds |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 INFINEON | 215 W | Automotive | 20 V | 4 V | AEC-Q101 | N-Channel | Through Hole | 175 °C | -55 °C | 10 V | I2PAK TO-262-3 Long Leads TO-262AA | PG-TO262-3 | 96 nC | 55 V | 2860 pF | 8 mOhm | MOSFET (Metal Oxide) | |||
 INFINEON | Automotive | 20 V | AEC-Q101 | N-Channel | Through Hole | 175 °C | -55 °C | 10 V | I2PAK TO-262-3 Long Leads TO-262AA | PG-TO262-3 | 55 V | 2075 pF | 11 mOhm | MOSFET (Metal Oxide) | 158 W | 80 nC | ||||
INFINEON | 79 W | Automotive | 20 V | 4 V | AEC-Q101 | N-Channel | Through Hole | 175 °C | -55 °C | 10 V | I2PAK TO-262-3 Long Leads TO-262AA | PG-TO262-3 | 56 nC | 60 V | 4500 pF | 7.4 mOhm | MOSFET (Metal Oxide) | |||
INFINEON | 188 W | Automotive | 20 V | 4 V | AEC-Q101 | N-Channel | Through Hole | 175 °C | -55 °C | 10 V | I2PAK TO-262-3 Long Leads TO-262AA | PG-TO262-3 | 110 nC | 40 V | 7300 pF | 3.5 mOhm | MOSFET (Metal Oxide) | |||
 INFINEON | 300 W | 20 V | 2 V | N-Channel | Through Hole | 175 °C | -55 °C | 10 V | I2PAK TO-262-3 Long Leads TO-262AA | 55 V | 5700 pF | 4.8 mOhm | MOSFET (Metal Oxide) | 230 nC | ||||||
 INFINEON | 136 W | Automotive | 16 V | 2.2 V | AEC-Q101 | N-Channel | Through Hole | 175 °C | -55 °C | 4.5 V 10 V | I2PAK TO-262-3 Long Leads TO-262AA | PG-TO262-3 | 30 V | 9750 pF | 2.7 mOhm | MOSFET (Metal Oxide) | 140 nC | |||
INFINEON | 107 W | Automotive | 20 V | 4 V | AEC-Q101 | N-Channel | Through Hole | 175 °C | -55 °C | 10 V | I2PAK TO-262-3 Long Leads TO-262AA | PG-TO262-3 | 81 nC | 60 V | 5.7 mOhm | MOSFET (Metal Oxide) | 6500 pF | |||
INFINEON | 20 V | N-Channel | Through Hole | 175 °C | -55 °C | 10 V | I2PAK TO-262-3 Long Leads TO-262AA | 55 V | 2075 pF | 10.7 mOhm | MOSFET (Metal Oxide) | 158 W | 80 nC | |||||||
INFINEON | 300 W | Automotive | 20 V | 2 V | AEC-Q101 | N-Channel | Through Hole | 175 °C | -55 °C | 10 V | I2PAK TO-262-3 Long Leads TO-262AA | PG-TO262-3 | 55 V | 5700 pF | 4.8 mOhm | MOSFET (Metal Oxide) | 230 nC | |||
INFINEON | 165 W | Automotive | 20 V | 4 V | AEC-Q101 | N-Channel | Through Hole | 175 °C | -55 °C | 10 V | I2PAK TO-262-3 Long Leads TO-262AA | PG-TO262-3 | 240 nC | 55 V | 5.4 mOhm | MOSFET (Metal Oxide) | 10760 pF |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 0.00 | |
Description
General part information
IPI80N Series
N-Channel 60 V 80A (Tc) 107W (Tc) Through Hole PG-TO262-3
Documents
Technical documentation and resources