Discrete Semiconductor Products

IPI80N06S208AKSA1

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INFINEON

MOSFET N-CH 55V 80A TO262-3

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Discrete Semiconductor Products

IPI80N06S208AKSA1

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INFINEON

MOSFET N-CH 55V 80A TO262-3

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPI80N06S208AKSA1

Drain to Source Voltage (Vdss)	55 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	96 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	2860 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max)	215 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	8 mOhm
Supplier Device Package	PG-TO262-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

IPI80N Series

Part	Power Dissipation (Max)	Grade	Vgs (Max)	Vgs(th) (Max) @ Id	Qualification	FET Type	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs	Technology	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds
INFINEON IPI80N06S208AKSA1	215 W	Automotive	20 V	4 V	AEC-Q101	N-Channel	Through Hole	175 °C	-55 °C	10 V	I2PAK TO-262-3 Long Leads TO-262AA	PG-TO262-3	96 nC	55 V	2860 pF	8 mOhm	MOSFET (Metal Oxide)
INFINEON IPI80N06S2L11AKSA1		Automotive	20 V		AEC-Q101	N-Channel	Through Hole	175 °C	-55 °C	10 V	I2PAK TO-262-3 Long Leads TO-262AA	PG-TO262-3		55 V	2075 pF	11 mOhm	MOSFET (Metal Oxide)	158 W	80 nC
INFINEON IPI80N06S407AKSA1	79 W	Automotive	20 V	4 V	AEC-Q101	N-Channel	Through Hole	175 °C	-55 °C	10 V	I2PAK TO-262-3 Long Leads TO-262AA	PG-TO262-3	56 nC	60 V	4500 pF	7.4 mOhm	MOSFET (Metal Oxide)
INFINEON IPI80N04S303AKSA1	188 W	Automotive	20 V	4 V	AEC-Q101	N-Channel	Through Hole	175 °C	-55 °C	10 V	I2PAK TO-262-3 Long Leads TO-262AA	PG-TO262-3	110 nC	40 V	7300 pF	3.5 mOhm	MOSFET (Metal Oxide)
INFINEON IPI80N06S2L05AKSA2	300 W		20 V	2 V		N-Channel	Through Hole	175 °C	-55 °C	10 V	I2PAK TO-262-3 Long Leads TO-262AA			55 V	5700 pF	4.8 mOhm	MOSFET (Metal Oxide)		230 nC
INFINEON IPI80N03S4L03AKSA1	136 W	Automotive	16 V	2.2 V	AEC-Q101	N-Channel	Through Hole	175 °C	-55 °C	4.5 V 10 V	I2PAK TO-262-3 Long Leads TO-262AA	PG-TO262-3		30 V	9750 pF	2.7 mOhm	MOSFET (Metal Oxide)		140 nC
INFINEON IPI80N06S405AKSA1	107 W	Automotive	20 V	4 V	AEC-Q101	N-Channel	Through Hole	175 °C	-55 °C	10 V	I2PAK TO-262-3 Long Leads TO-262AA	PG-TO262-3	81 nC	60 V		5.7 mOhm	MOSFET (Metal Oxide)			6500 pF
INFINEON IPI80N06S2L11AKSA2			20 V			N-Channel	Through Hole	175 °C	-55 °C	10 V	I2PAK TO-262-3 Long Leads TO-262AA			55 V	2075 pF	10.7 mOhm	MOSFET (Metal Oxide)	158 W	80 nC
INFINEON IPI80N06S2L05AKSA1	300 W	Automotive	20 V	2 V	AEC-Q101	N-Channel	Through Hole	175 °C	-55 °C	10 V	I2PAK TO-262-3 Long Leads TO-262AA	PG-TO262-3		55 V	5700 pF	4.8 mOhm	MOSFET (Metal Oxide)		230 nC
INFINEON IPI80N06S3-05	165 W	Automotive	20 V	4 V	AEC-Q101	N-Channel	Through Hole	175 °C	-55 °C	10 V	I2PAK TO-262-3 Long Leads TO-262AA	PG-TO262-3	240 nC	55 V		5.4 mOhm	MOSFET (Metal Oxide)			10760 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Digikey	N/A	0	$ 0.00

Description

General part information

IPI80N Series

N-Channel 55 V 80A (Tc) 215W (Tc) Through Hole PG-TO262-3

Documents

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