Discrete Semiconductor Products

SIRA01DP-T1-GE3

Active

MOSFET P-CH 30V 26A/60A PPAK SO8

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

MOSFET P-CH 30V 26A/60A PPAK SO8

Technical Specifications

Parameters and characteristics for this part

Specification	SIRA01DP-T1-GE3

Current - Continuous Drain (Id) @ 25°C	26 A, 60 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	112 nC
Input Capacitance (Ciss) (Max) @ Vds	3490 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8
Power Dissipation (Max)	62.5 W, 5 W
Rds On (Max) @ Id, Vgs	4.9 mOhm
Supplier Device Package	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	16 V
Vgs (Max) [Min]	-20 V
Vgs(th) (Max) @ Id [Max]	2.2 V

Part	Vgs(th) (Max) @ Id [Max]	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	FET Type	Package / Case	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Vgs (Max) [Max]	Vgs (Max) [Min]	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C
Vishay General Semiconductor - Diodes Division SIRA01DP-T1-GE3	2.2 V	Surface Mount	3490 pF	5 W 62.5 W	P-Channel	PowerPAK® SO-8	4.9 mOhm	4.5 V 10 V	PowerPAK® SO-8	16 V	-20 V	112 nC	MOSFET (Metal Oxide)	30 V	-55 °C	150 °C	26 A 60 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 30 V 26A (Ta), 60A (Tc) 5W (Ta), 62.5W (Tc) Surface Mount PowerPAK® SO-8

Technical documentation and resources