SIRA01 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET P-CH 30V 26A/60A PPAK SO8
| Part | Vgs(th) (Max) @ Id [Max] | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | FET Type | Package / Case | Rds On (Max) @ Id, Vgs | Drive Voltage (Max Rds On, Min Rds On) | Supplier Device Package | Vgs (Max) [Max] | Vgs (Max) [Min] | Gate Charge (Qg) (Max) @ Vgs [Max] | Technology | Drain to Source Voltage (Vdss) | Operating Temperature [Min] | Operating Temperature [Max] | Current - Continuous Drain (Id) @ 25°C |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 2.2 V | Surface Mount | 3490 pF | 5 W 62.5 W | P-Channel | PowerPAK® SO-8 | 4.9 mOhm | 4.5 V 10 V | PowerPAK® SO-8 | 16 V | -20 V | 112 nC | MOSFET (Metal Oxide) | 30 V | -55 °C | 150 °C | 26 A 60 A |