Discrete Semiconductor Products

BYR16W-1200Q

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DIODE GEN PURP 1.2KV 16A TO247-2

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Discrete Semiconductor Products

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DIODE GEN PURP 1.2KV 16A TO247-2

Technical Specifications

Parameters and characteristics for this part

Specification	BYR16W-1200Q

Current - Average Rectified (Io)	16 A
Current - Reverse Leakage @ Vr	100 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Package / Case	TO-247-2
Reverse Recovery Time (trr)	105 ns
Speed	500 ns, 200 mA
Supplier Device Package	TO-247-2
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If [Max]	2.7 V

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Max]	Current - Average Rectified (Io)	Technology	Supplier Device Package	Mounting Type	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If [Max]	Reverse Recovery Time (trr)	Package / Case	Speed
WeEn Semiconductors BYR16W-1200Q	1.2 kV	175 ░C	16 A	Standard	TO-247-2	Through Hole	100 µA	2.7 V	105 ns	TO-247-2	200 mA 500 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 1200 V 16A Through Hole TO-247-2

Technical documentation and resources

No documents available